IRFB5620PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 25A TO220AB
$3.51
Available to order
Reference Price (USD)
1+
$2.37000
10+
$2.14200
100+
$1.72090
500+
$1.33846
1,000+
$1.10900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRFB5620PBF by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRFB5620PBF inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Fairchild Semiconductor
FCH041N65F-F085
onsemi
NTMTSC1D6N10MCTXG
STMicroelectronics
STD12N60DM2AG
Vishay Siliconix
SQJA88EP-T1_GE3
Infineon Technologies
IMBG120R140M1HXTMA1
IXYS
IXFK64N60P3
Vishay Siliconix
SUP40010EL-GE3
Vishay Siliconix
SIHA18N60E-E3
Vishay Siliconix
SI7848BDP-T1-E3
Infineon Technologies