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IRF9541

Harris Corporation
IRF9541 Preview
Harris Corporation
P-CHANNEL POWER MOSFET
$1.77
Available to order
Reference Price (USD)
1+
$1.77000
500+
$1.7523
1000+
$1.7346
1500+
$1.7169
2000+
$1.6992
2500+
$1.6815
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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