HAT1093C-EL-E
Renesas
Renesas
HAT1093C - P-CHANNEL POWER MOSFE
$0.23
Available to order
Reference Price (USD)
1+
$0.23078
500+
$0.2284722
1000+
$0.2261644
1500+
$0.2238566
2000+
$0.2215488
2500+
$0.219241
Exquisite packaging
Discount
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Boost your electronic applications with HAT1093C-EL-E, a reliable Transistors - FETs, MOSFETs - Single by Renesas. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, HAT1093C-EL-E meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 54mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CMFPAK
- Package / Case: 6-SMD, Flat Leads
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