2SJ358C-T1-AZ
Renesas
Renesas
2SJ358C-T1-AZ - P-CHANNEL MOS FE
$0.77
Available to order
Reference Price (USD)
1+
$0.77429
500+
$0.7665471
1000+
$0.7588042
1500+
$0.7510613
2000+
$0.7433184
2500+
$0.7355755
Exquisite packaging
Discount
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Renesas presents 2SJ358C-T1-AZ, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, 2SJ358C-T1-AZ delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 143mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: MP-2
- Package / Case: TO-243AA
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