IPW65R080CFDFKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
$8.76
Available to order
Reference Price (USD)
240+
$6.85550
Exquisite packaging
Discount
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Boost your electronic applications with IPW65R080CFDFKSA2, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPW65R080CFDFKSA2 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.8mA
- Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5030 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 391W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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