DMN3071LFR4-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 3.4A 3DFN
$0.09
Available to order
Reference Price (USD)
1+
$0.08910
500+
$0.088209
1000+
$0.087318
1500+
$0.086427
2000+
$0.085536
2500+
$0.084645
Exquisite packaging
Discount
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Experience the power of DMN3071LFR4-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMN3071LFR4-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1010-3
- Package / Case: 3-XFDFN
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