IPW60R125CFD7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 18A TO247-3
$7.02
Available to order
Reference Price (USD)
1+
$5.46000
10+
$4.91000
240+
$4.08313
720+
$3.36672
1,200+
$2.88910
Exquisite packaging
Discount
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IPW60R125CFD7XKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPW60R125CFD7XKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 390µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 92W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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