IXFA4N100P-TRL
IXYS
IXYS
MOSFET N-CH 1000V 4A TO263
$2.60
Available to order
Reference Price (USD)
1+
$2.60443
500+
$2.5783857
1000+
$2.5523414
1500+
$2.5262971
2000+
$2.5002528
2500+
$2.4742085
Exquisite packaging
Discount
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Upgrade your electronic designs with IXFA4N100P-TRL by IXYS, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IXFA4N100P-TRL ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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