IPB110P06LMATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 100A TO263-3
$5.93
Available to order
Reference Price (USD)
1+
$5.93000
500+
$5.8707
1000+
$5.8114
1500+
$5.7521
2000+
$5.6928
2500+
$5.6335
Exquisite packaging
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Boost your electronic applications with IPB110P06LMATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPB110P06LMATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2V @ 5.55mA
- Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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