IPW60R041P6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 77.5A TO247-3
$15.42
Available to order
Reference Price (USD)
1+
$14.26000
10+
$12.92800
240+
$10.79304
720+
$9.19226
1,200+
$8.12509
Exquisite packaging
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Boost your electronic applications with IPW60R041P6FKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPW60R041P6FKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 481W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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