IPW60R024CFD7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 77A TO247-3-41
$19.72
Available to order
Reference Price (USD)
1+
$19.72000
500+
$19.5228
1000+
$19.3256
1500+
$19.1284
2000+
$18.9312
2500+
$18.734
Exquisite packaging
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Experience the power of IPW60R024CFD7XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPW60R024CFD7XKSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
- Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7268 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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