IPT013N08NM5LFATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-HSOF-8
$7.97
Available to order
Reference Price (USD)
1+
$7.97000
500+
$7.8903
1000+
$7.8106
1500+
$7.7309
2000+
$7.6512
2500+
$7.5715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IPT013N08NM5LFATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPT013N08NM5LFATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8
- Package / Case: 8-PowerSFN
Related Products
Renesas Electronics America Inc
2SK1160-E
Infineon Technologies
IPT054N15N5ATMA1
UnitedSiC
UJ3C065080K3S
Vishay Siliconix
SI3483DDV-T1-BE3
Diodes Incorporated
DMTH4004LPS-13
Renesas Electronics America Inc
RJK0392DPA-WS#J53
Diodes Incorporated
DMN2710UW-13
STMicroelectronics
SCTH70N120G2V-7
IXYS
FMD47-06KC5
Renesas Electronics America Inc