SCTH70N120G2V-7
STMicroelectronics
STMicroelectronics
SILICON CARBIDE POWER MOSFET 120
$47.17
Available to order
Reference Price (USD)
1+
$47.17000
500+
$46.6983
1000+
$46.2266
1500+
$45.7549
2000+
$45.2832
2500+
$44.8115
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SCTH70N120G2V-7 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SCTH70N120G2V-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 4.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 469W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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