UJ3C065080K3S
UnitedSiC
UnitedSiC
MOSFET N-CH 650V 31A TO247-3
$8.74
Available to order
Reference Price (USD)
1+
$8.74000
500+
$8.6526
1000+
$8.5652
1500+
$8.4778
2000+
$8.3904
2500+
$8.303
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance UJ3C065080K3S from UnitedSiC, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, UJ3C065080K3S delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SI3483DDV-T1-BE3
Diodes Incorporated
DMTH4004LPS-13
Renesas Electronics America Inc
RJK0392DPA-WS#J53
Diodes Incorporated
DMN2710UW-13
STMicroelectronics
SCTH70N120G2V-7
IXYS
FMD47-06KC5
Renesas Electronics America Inc
2SK3480-AZ
Goford Semiconductor
G28N03D3
Alpha & Omega Semiconductor Inc.
AONS21303C
Infineon Technologies