IPP80R1K4P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 4A TO220-3
$1.90
Available to order
Reference Price (USD)
1+
$1.45000
10+
$1.28300
100+
$1.01360
500+
$0.78604
1,000+
$0.62057
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPP80R1K4P7XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPP80R1K4P7XKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
- FET Feature: Super Junction
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Micro Commercial Co
MCM1208-TP
STMicroelectronics
STP25N60M2-EP
Vishay Siliconix
SQJ158EP-T1_GE3
Vishay Siliconix
SIR618DP-T1-GE3
Fairchild Semiconductor
FDD8453LZ-F085
IXYS
IXTY18P10T
Infineon Technologies
IPW60R160C6FKSA1
Taiwan Semiconductor Corporation
TSM126CX RFG
Infineon Technologies
IPI030N10N3GXKSA1
IXYS