Shopping cart

Subtotal: $0.00

STP25N60M2-EP

STMicroelectronics
STP25N60M2-EP Preview
STMicroelectronics
MOSFET N-CH 600V 18A TO220
$3.03
Available to order
Reference Price (USD)
1+
$4.84000
50+
$3.94420
100+
$3.61860
500+
$2.98368
1,000+
$2.56040
2,500+
$2.44644
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 188mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

Related Products

Vishay Siliconix

SQJ158EP-T1_GE3

Vishay Siliconix

SIR618DP-T1-GE3

Fairchild Semiconductor

FDD8453LZ-F085

Infineon Technologies

IPW60R160C6FKSA1

Taiwan Semiconductor Corporation

TSM126CX RFG

Infineon Technologies

IPI030N10N3GXKSA1

Microchip Technology

APT40N60JCU3

Top