SIR618DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 14.2A PPAK SO-8
$0.55
Available to order
Reference Price (USD)
3,000+
$0.54694
6,000+
$0.52126
15,000+
$0.50292
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SIR618DP-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIR618DP-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Fairchild Semiconductor
FDD8453LZ-F085
IXYS
IXTY18P10T
Infineon Technologies
IPW60R160C6FKSA1
Taiwan Semiconductor Corporation
TSM126CX RFG
Infineon Technologies
IPI030N10N3GXKSA1
IXYS
IXFZ140N25T
onsemi
NVTYS004N04CTWG
Microchip Technology
APT40N60JCU3
IXYS
IXTQ180N10T
Microchip Technology