IPL65R130C7AUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 15A 4VSON
$6.77
Available to order
Reference Price (USD)
3,000+
$2.44511
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IPL65R130C7AUMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPL65R130C7AUMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 102W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4
- Package / Case: 4-PowerTSFN
Related Products
Microchip Technology
APT32M80J
Infineon Technologies
IRFR48ZTRPBF
onsemi
NTD4858NA-1G
Texas Instruments
CSD17570Q5BT
Diodes Incorporated
DMT3006LFVQ-7
onsemi
FCP11N60N
Panjit International Inc.
PJQ5411_R2_00001
Toshiba Semiconductor and Storage
SSM6J422TU,LXHF
onsemi
FCH104N60F
onsemi