FCP11N60N
onsemi
onsemi
MOSFET N-CH 600V 10.8A TO220-3
$3.34
Available to order
Reference Price (USD)
1+
$3.17000
10+
$2.82600
100+
$2.31750
800+
$1.69570
1,600+
$1.58266
Exquisite packaging
Discount
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FCP11N60N by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FCP11N60N ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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