CSD17570Q5BT
Texas Instruments
Texas Instruments
MOSFET N-CH 30V 100A 8VSON
$2.97
Available to order
Reference Price (USD)
1+
$2.97000
500+
$2.9403
1000+
$2.9106
1500+
$2.8809
2000+
$2.8512
2500+
$2.8215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with CSD17570Q5BT by Texas Instruments, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, CSD17570Q5BT ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.69mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
DMT3006LFVQ-7
onsemi
FCP11N60N
Panjit International Inc.
PJQ5411_R2_00001
Toshiba Semiconductor and Storage
SSM6J422TU,LXHF
onsemi
FCH104N60F
onsemi
NTMFS4985NFT1G
Alpha & Omega Semiconductor Inc.
AOTF190A60L
Sanken
2SK3711
Diodes Incorporated
DMN3018SSS-13
Rectron USA