IPL60R085P7AUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 39A 4VSON
$7.34
Available to order
Reference Price (USD)
3,000+
$3.52364
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IPL60R085P7AUMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 154W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4
- Package / Case: 4-PowerTSFN
Related Products
Wolfspeed, Inc.
C3M0032120K
IXYS
IXTT69N30P
Diodes Incorporated
DMP31D7LFBQ-7B
Toshiba Semiconductor and Storage
TK10E60W,S1VX
IXYS
IXTA1R6N100D2
Renesas Electronics America Inc
2SK1835-E
NXP USA Inc.
BUK7E4R0-80E,127
STMicroelectronics
STH240N10F7-6
STMicroelectronics
STB14NK50ZT4
Diodes Incorporated