DMP31D7LFBQ-7B
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V X1-DFN1006
$0.04
Available to order
Reference Price (USD)
1+
$0.04376
500+
$0.0433224
1000+
$0.0428848
1500+
$0.0424472
2000+
$0.0420096
2500+
$0.041572
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with DMP31D7LFBQ-7B, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMP31D7LFBQ-7B for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 530mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
Related Products
Toshiba Semiconductor and Storage
TK10E60W,S1VX
IXYS
IXTA1R6N100D2
Renesas Electronics America Inc
2SK1835-E
NXP USA Inc.
BUK7E4R0-80E,127
STMicroelectronics
STH240N10F7-6
STMicroelectronics
STB14NK50ZT4
Diodes Incorporated
DMN2028UFDF-7
STMicroelectronics
STF33N60M6
IXYS
IXFP90N20X3
onsemi