BUK7E4R0-80E,127
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 80V 120A I2PAK
$1.25
Available to order
Reference Price (USD)
1+
$1.25000
500+
$1.2375
1000+
$1.225
1500+
$1.2125
2000+
$1.2
2500+
$1.1875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NXP USA Inc. presents BUK7E4R0-80E,127, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, BUK7E4R0-80E,127 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12030 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
STMicroelectronics
STH240N10F7-6
STMicroelectronics
STB14NK50ZT4
Diodes Incorporated
DMN2028UFDF-7
STMicroelectronics
STF33N60M6
IXYS
IXFP90N20X3
onsemi
MCH6331-TL-H
Infineon Technologies
IPI200N25N3GAKSA1
Vishay Siliconix
SIJA22DP-T1-GE3
Fairchild Semiconductor
HUF75344A3
onsemi