Shopping cart

Subtotal: $0.00

IPI90R500C3XKSA2

Infineon Technologies
IPI90R500C3XKSA2 Preview
Infineon Technologies
MOSFET N-CH 900V 11A TO262-3
$2.92
Available to order
Reference Price (USD)
1+
$2.91600
500+
$2.88684
1000+
$2.85768
1500+
$2.82852
2000+
$2.79936
2500+
$2.7702
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 740µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

Related Products

GeneSiC Semiconductor

G3R30MT12K

STMicroelectronics

STD7NS20T4

Fairchild Semiconductor

SFP9634

Infineon Technologies

IRF9520NPBF

Vishay Siliconix

SIR424DP-T1-GE3

Renesas Electronics America Inc

UPA1816GR-9JG-E1-A

Taiwan Semiconductor Corporation

TSM210N02CX RFG

Renesas Electronics America Inc

NP80N04MHE-S18-AY

Vishay Siliconix

IRFB17N50LPBF

Top