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G3R30MT12K

GeneSiC Semiconductor
G3R30MT12K Preview
GeneSiC Semiconductor
SIC MOSFET N-CH 90A TO247-4
$23.88
Available to order
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$23.4024
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$22.686
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4

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