G3R30MT12K
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 90A TO247-4
$23.88
Available to order
Reference Price (USD)
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$23.88000
500+
$23.6412
1000+
$23.4024
1500+
$23.1636
2000+
$22.9248
2500+
$22.686
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose G3R30MT12K by GeneSiC Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with G3R30MT12K inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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