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TSM210N02CX RFG

Taiwan Semiconductor Corporation
TSM210N02CX RFG Preview
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 20V 6.7A SOT23
$0.82
Available to order
Reference Price (USD)
3,000+
$0.10494
6,000+
$0.09911
15,000+
$0.09037
30,000+
$0.08454
75,000+
$0.08162
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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