IPI80N06S207AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 80A TO262-3
$0.76
Available to order
Reference Price (USD)
Call+
$Call
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPI80N06S207AKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPI80N06S207AKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
- Vgs(th) (Max) @ Id: 4V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
IRFIZ14GPBF
Toshiba Semiconductor and Storage
TK190U65Z,RQ
Vishay Siliconix
IRFBC40PBF-BE3
Renesas Electronics America Inc
UPA2521T1H-T2-AT
Renesas Electronics America Inc
NP89N06PDK-E1-AY
Infineon Technologies
IPP60R380P6
Infineon Technologies
IRLB8314PBF
STMicroelectronics
STH2N120K5-2AG
IXYS
IXTP12N65X2
Vishay Siliconix