IPI65R310CFDXKSA1700
Infineon Technologies
Infineon Technologies
IPI65R310 - 650V AND 700V COOLMO
$0.89
Available to order
Reference Price (USD)
1+
$0.89000
500+
$0.8811
1000+
$0.8722
1500+
$0.8633
2000+
$0.8544
2500+
$0.8455
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPI65R310CFDXKSA1700, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPI65R310CFDXKSA1700 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
SI2302CDS-T1-E3
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL3407A-F2-0000HF
STMicroelectronics
STU7NM60N
onsemi
FDB8444-F085
Nexperia USA Inc.
PSMN1R5-40YSDX
IXYS
IXFN26N120P
Vishay Siliconix
SQJA70EP-T1_GE3
Nexperia USA Inc.
PMV65UNER
Fairchild Semiconductor
SFR9224TF
onsemi