SI2302CDS-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 2.6A SOT23-3
$0.43
Available to order
Reference Price (USD)
3,000+
$0.11086
6,000+
$0.10500
15,000+
$0.09621
30,000+
$0.09034
75,000+
$0.08155
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SI2302CDS-T1-E3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SI2302CDS-T1-E3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 710mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL3407A-F2-0000HF
STMicroelectronics
STU7NM60N
onsemi
FDB8444-F085
Nexperia USA Inc.
PSMN1R5-40YSDX
IXYS
IXFN26N120P
Vishay Siliconix
SQJA70EP-T1_GE3
Nexperia USA Inc.
PMV65UNER
Fairchild Semiconductor
SFR9224TF
onsemi
FCP16N60N
Micro Commercial Co