PSMN1R5-40YSDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 240A LFPAK56
$2.42
Available to order
Reference Price (USD)
1+
$2.42000
500+
$2.3958
1000+
$2.3716
1500+
$2.3474
2000+
$2.3232
2500+
$2.299
Exquisite packaging
Discount
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Upgrade your electronic designs with PSMN1R5-40YSDX by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, PSMN1R5-40YSDX ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 240A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 238W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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