YJL2102W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 20V 3A SOT-323
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with YJL2102W-F2-0000HF, a high-quality Transistors - FETs, MOSFETs - Single from Yangzhou Yangjie Electronic Technology Co.,Ltd. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, YJL2102W-F2-0000HF provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
Infineon Technologies
IPP60R199CPXKSA1
Rectron USA
RM40N200TI
Infineon Technologies
IPB100N08S2L07ATMA1
Rohm Semiconductor
RQ3E180GNTB
Nexperia USA Inc.
PMPB215ENEAX
IXYS
IXTH1N250
Vishay Siliconix
SI9433BDY-T1-E3
Alpha & Omega Semiconductor Inc.
AOT25S65L
onsemi
FDS3590
NXP USA Inc.