G60N10T
Goford Semiconductor
Goford Semiconductor
N100V,RD(MAX)<25M@10V,RD(MAX)<30
$1.71
Available to order
Reference Price (USD)
1+
$1.71000
500+
$1.6929
1000+
$1.6758
1500+
$1.6587
2000+
$1.6416
2500+
$1.6245
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with G60N10T, a reliable Transistors - FETs, MOSFETs - Single by Goford Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, G60N10T meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Renesas Electronics America Inc
NP100P06PDG-E1-AY
Rohm Semiconductor
RS1E220ATTB1
Texas Instruments
TPS1100D
Vishay Siliconix
SIR124DP-T1-RE3
onsemi
NVD6416ANLT4G-VF01
Nexperia USA Inc.
PSMN1R2-25YLC,115
NXP USA Inc.
BUK761R4-30E,118
Taiwan Semiconductor Corporation
TSM024NA04LCR RLG
STMicroelectronics
STW75N60M6-4
Diodes Incorporated