NTJD1155LT1G
onsemi
onsemi
MOSFET N/P-CH 8V 1.3A SOT363
$0.44
Available to order
Reference Price (USD)
3,000+
$0.13145
6,000+
$0.12386
15,000+
$0.11627
30,000+
$0.10716
75,000+
$0.10336
Exquisite packaging
Discount
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Discover high-performance NTJD1155LT1G from onsemi, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let onsemi s NTJD1155LT1G enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 1.3A
- Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 400mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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