IPD80R2K0P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 3A TO252-3
$1.27
Available to order
Reference Price (USD)
2,500+
$0.38793
5,000+
$0.36853
12,500+
$0.35468
25,000+
$0.35266
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IPD80R2K0P7ATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPD80R2K0P7ATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 24W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SI7116DN-T1-GE3
GeneSiC Semiconductor
G3R75MT12D
onsemi
FDMS86581
Panjit International Inc.
PJS6416_S1_00001
onsemi
NTE4153NT1G
Infineon Technologies
IAUZ40N06S5N050ATMA1
Infineon Technologies
IPA60R650CEXKSA1
Vishay Siliconix
SI7113DN-T1-GE3
onsemi
SCH1436-TL-W
Fairchild Semiconductor