NTE4153NT1G
onsemi

onsemi
MOSFET N-CH 20V 915MA SC89-3
$0.50
Available to order
Reference Price (USD)
3,000+
$0.09641
6,000+
$0.08715
15,000+
$0.07789
30,000+
$0.07325
75,000+
$0.06538
150,000+
$0.06307
Exquisite packaging
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Boost your electronic applications with NTE4153NT1G, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NTE4153NT1G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
- Vgs (Max): ±6V
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 300mW (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490