G3R75MT12D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 41A TO247-3
$11.13
Available to order
Reference Price (USD)
1+
$11.13000
500+
$11.0187
1000+
$10.9074
1500+
$10.7961
2000+
$10.6848
2500+
$10.5735
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose G3R75MT12D by GeneSiC Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with G3R75MT12D inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 207W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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