RS1E220ATTB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 30V 22A/76A 8HSOP
$2.88
Available to order
Reference Price (USD)
1+
$2.88000
500+
$2.8512
1000+
$2.8224
1500+
$2.7936
2000+
$2.7648
2500+
$2.736
Exquisite packaging
Discount
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Discover high-performance RS1E220ATTB1 from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, RS1E220ATTB1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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