IPB180N03S4L01ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 180A TO263-7
$1.62
Available to order
Reference Price (USD)
1,000+
$1.37090
Exquisite packaging
Discount
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Enhance your circuit performance with IPB180N03S4L01ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPB180N03S4L01ATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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