RQ3E180AJTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 18A/30A 8HSMT
$1.21
Available to order
Reference Price (USD)
3,000+
$0.40530
Exquisite packaging
Discount
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RQ3E180AJTB by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, RQ3E180AJTB ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 11mA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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