IMBG65R083M1HXTMA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET PG-TO263-
$11.93
Available to order
Reference Price (USD)
1+
$11.93000
500+
$11.8107
1000+
$11.6914
1500+
$11.5721
2000+
$11.4528
2500+
$11.3335
Exquisite packaging
Discount
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Boost your electronic applications with IMBG65R083M1HXTMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IMBG65R083M1HXTMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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