APT80GA90S
Microchip Technology

Microchip Technology
IGBT PT MOS 8 SINGLE 900 V 80 A
$11.94
Available to order
Reference Price (USD)
1+
$11.94000
500+
$11.8206
1000+
$11.7012
1500+
$11.5818
2000+
$11.4624
2500+
$11.343
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APT80GA90S Single IGBT by Microchip Technology sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Microchip Technology for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 145 A
- Current - Collector Pulsed (Icm): 239 A
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
- Power - Max: 625 W
- Switching Energy: 1.625mJ (on), 1.389mJ (off)
- Input Type: Standard
- Gate Charge: 200 nC
- Td (on/off) @ 25°C: 18ns/149ns
- Test Condition: 600V, 47A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: D3PAK