HGTG12N60D1D
Harris Corporation
Harris Corporation
UFS SERIES N-CHANNEL IGBT
$6.32
Available to order
Reference Price (USD)
1+
$6.32000
500+
$6.2568
1000+
$6.1936
1500+
$6.1304
2000+
$6.0672
2500+
$6.004
Exquisite packaging
Discount
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The HGTG12N60D1D Single IGBT by Harris Corporation sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Harris Corporation for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 21 A
- Current - Collector Pulsed (Icm): 48 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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