IGZ75N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 119A TO247-4
$3.42
Available to order
Reference Price (USD)
240+
$5.23175
Exquisite packaging
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Choose IGZ75N65H5XKSA1 Single IGBTs by Infineon Technologies for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Infineon Technologies's reputation for quality makes IGZ75N65H5XKSA1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 119 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 680µJ (on), 430µJ (off)
- Input Type: Standard
- Gate Charge: 166 nC
- Td (on/off) @ 25°C: 26ns/347ns
- Test Condition: 400V, 37.5A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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Infineon Technologies