IGW50N65H5AXKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
$5.17
Available to order
Reference Price (USD)
240+
$4.83117
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IGW50N65H5AXKSA1 Single IGBTs from Infineon Technologies, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, IGW50N65H5AXKSA1 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 270 W
- Switching Energy: 450µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 116 nC
- Td (on/off) @ 25°C: 21ns/173ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
Related Products
onsemi
NGTB45N60S1WG
Infineon Technologies
IGW15T120FKSA1
IXYS
IXBH24N170
STMicroelectronics
STGF20H65DFB2
Fairchild Semiconductor
FGA3060ADF
NTE Electronics, Inc
NTE3322
Infineon Technologies
IKD04N60RAATMA1
IXYS
IXYK110N120A4
IXYS
IXYJ20N120C3D1
onsemi