IAUZ30N08S5N186ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-TSDSON-8
$0.48
Available to order
Reference Price (USD)
1+
$0.48380
500+
$0.478962
1000+
$0.474124
1500+
$0.469286
2000+
$0.464448
2500+
$0.45961
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IAUZ30N08S5N186ATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IAUZ30N08S5N186ATMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-32
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
DMN4036LK3Q-13
Vishay Siliconix
SQD50P08-28-T4_GE3
Renesas
NP34N055SLE-E1-AY
Transphorm
TP65H050G4WS
Diodes Incorporated
DMT3020LFDFQ-13
Diodes Incorporated
DMTH8008LFG-7
Diodes Incorporated
DMT67M8LPSW-13
IXYS
IXTT6N120-TRL
Infineon Technologies
IPB65R190CFD7AATMA1
onsemi