TP65H050G4WS
Transphorm
Transphorm
650 V 34 A GAN FET
$15.64
Available to order
Reference Price (USD)
1+
$15.64000
500+
$15.4836
1000+
$15.3272
1500+
$15.1708
2000+
$15.0144
2500+
$14.858
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with TP65H050G4WS, a high-quality Transistors - FETs, MOSFETs - Single from Transphorm. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TP65H050G4WS provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 119W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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