DMT67M8LPSW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 17.3A/82A PWRDI
$0.94
Available to order
Reference Price (USD)
1+
$0.94000
500+
$0.9306
1000+
$0.9212
1500+
$0.9118
2000+
$0.9024
2500+
$0.893
Exquisite packaging
Discount
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Experience the power of DMT67M8LPSW-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMT67M8LPSW-13 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type Q)
- Package / Case: 8-PowerTDFN
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Diodes Incorporated