IAUA220N08S5N021AUMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-HSOF-5
$2.40
Available to order
Reference Price (USD)
1+
$2.40240
500+
$2.378376
1000+
$2.354352
1500+
$2.330328
2000+
$2.306304
2500+
$2.28228
Exquisite packaging
Discount
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Upgrade your electronic designs with IAUA220N08S5N021AUMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IAUA220N08S5N021AUMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 211W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-4
- Package / Case: 5-PowerSFN
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