ISC036N04NM5ATMA1
Infineon Technologies
Infineon Technologies
40V 3.6M OPTIMOS MOSFET SUPERSO8
$1.40
Available to order
Reference Price (USD)
1+
$1.40000
500+
$1.386
1000+
$1.372
1500+
$1.358
2000+
$1.344
2500+
$1.33
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with ISC036N04NM5ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust ISC036N04NM5ATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 63W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
SQJA86EP-T1_GE3
Diodes Incorporated
DMG1012T-7
IXYS
IXTH26N60P
STMicroelectronics
STW20NM60
Panjit International Inc.
PJQ4411P_R2_00001
Alpha & Omega Semiconductor Inc.
AOD458
Panasonic Electronic Components
SK8403180L
onsemi
SCH1333-TL-H
Toshiba Semiconductor and Storage
SSM6J401TU,LF
Fairchild Semiconductor