PJQ4411P_R2_00001
Panjit International Inc.
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of PJQ4411P_R2_00001, a premium Transistors - FETs, MOSFETs - Single from Panjit International Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PJQ4411P_R2_00001 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 4659 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
Related Products
Alpha & Omega Semiconductor Inc.
AOD458
Panasonic Electronic Components
SK8403180L
onsemi
SCH1333-TL-H
Toshiba Semiconductor and Storage
SSM6J401TU,LF
Fairchild Semiconductor
HUF76423D3
Vishay Siliconix
SIHB17N80AE-GE3
Fairchild Semiconductor
FDG311N
onsemi
NTMTS1D6N10MCTXG
Rohm Semiconductor
RTL035N03FRATR
Renesas Electronics America Inc